Novel NAND DRAM with surrounding gate transistor (SGT)-type gain cell
Hiroki Nakamura, Tetsuo Endoh, Hiroshi Sakuraba, Fujio MasuokaVolume:
87
Year:
2004
Language:
english
Pages:
8
DOI:
10.1002/ecjb.10198
File:
PDF, 1.95 MB
english, 2004