An analysis of higher-order of a GaAs FET depending on IMD...

Electronics and Communications in Japan (Part II: Electronics)) 2002 Vol. 85; Iss. 4

An analysis of higher-order of a GaAs FET depending on IMD source impedance and its application to a design of low-distortion MMIC power amplifiers

Shigeo Kusunoki, Takeshi Furuta, Yoshikazu Murakami
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Volume:
85
Year:
2002
Language:
english
Pages:
12
DOI:
10.1002/ecjb.1100
File:
PDF, 281 KB
english, 2002
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