Analysis of stressed-gate SiO2 films with electron...

Electronics and Communications in Japan (Part II: Electronics)) 2005 Vol. 88; Iss. 6

Analysis of stressed-gate SiO2 films with electron injection by conductive atomic force microscopy

Akiyoshi Seko, Yukihiko Watanabe, Hiroki Kondo, Akira Sakai, Shigeaki Zaima, Yukio Yasuda
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Volume:
88
Year:
2005
Language:
english
Pages:
9
DOI:
10.1002/ecjb.20123
File:
PDF, 1.13 MB
english, 2005
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