Impact of high-temperature rapid thermal annealing in...

Electronics and Communications in Japan (Part II: Electronics)) 1996 Vol. 79; Iss. 12

Impact of high-temperature rapid thermal annealing in deep-submicrometer CMOSFET design

Akihiro Shimizu, Nagatoshi Ohki, Hiroshi Ishida, Toshiaki Yamanaka, Ken-Ichi Kikushima, Kousuke Okuyama, Katsuhiko Kubota, Atsuyoshi Koike
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Volume:
79
Year:
1996
Language:
english
Pages:
10
DOI:
10.1002/ecjb.4420791208
File:
PDF, 687 KB
english, 1996
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