Anisotropy and hot electron effects on semiconducting Si...

Anisotropy and hot electron effects on semiconducting Si samples in the temperature range 1–300 °K

I. Kirschner, T. Porjesz, J. Bánkuti, P. Zentai
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Volume:
32
Language:
english
Pages:
9
DOI:
10.1007/bf03157315
Date:
December, 1972
File:
PDF, 383 KB
english, 1972
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