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Electrical and memory window properties of Sr0.8-xBaxBi2.2Ta2-yZryO9ferroelectric gate in metal-ferroelectric-insulator-semiconductor structure
M. S. Bozgeyik, J. S. Cross, H. Ishiwara, K. ShinozakiVolume:
28
Language:
english
Pages:
7
DOI:
10.1007/s10832-012-9698-3
Date:
May, 2012
File:
PDF, 538 KB
english, 2012