Investigation of gate-all-around silicon nanowire...

Investigation of gate-all-around silicon nanowire transistors for ultimately scaled CMOS technology from top-down approach

Ru Huang, Run-sheng Wang
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Volume:
5
Language:
english
Pages:
8
DOI:
10.1007/s11467-010-0110-y
Date:
December, 2010
File:
PDF, 500 KB
english, 2010
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