In SituStress Measurements During GaN Growth on...

In SituStress Measurements During GaN Growth on Ion-Implanted AlN/Si Substrates

Jarod C. Gagnon, Mihir Tungare, Xiaojun Weng, Jeffrey M. Leathersich, Fatemeh Shahedipour-Sandvik, Joan M. Redwing
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Volume:
41
Language:
english
Pages:
8
DOI:
10.1007/s11664-011-1852-1
Date:
May, 2012
File:
PDF, 595 KB
english, 2012
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