High-performance and current crowding-free InGaN-GaN-based...

Frontiers of Optoelectronics 2012 / 06 Vol. 5; Iss. 2

High-performance and current crowding-free InGaN-GaN-based LEDs integrated by an electrically-reverse-connected Schottky diode and a Mg-delta dopedp-GaN

Sei-Min Kim, Seon-Ho Jang, Ja-Soon Jang
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Volume:
5
Language:
english
Pages:
6
DOI:
10.1007/s12200-012-0256-z
Date:
June, 2012
File:
PDF, 255 KB
english, 2012
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