Etching model for p doped poly-Si using Cl2 gas

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1985 Vol. 7-8; Iss. part-P2

Etching model for p doped poly-Si using Cl2 gas

Eiji Ikawa, Yukinori Kurogi
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Volume:
7-8
Year:
1985
Language:
english
Pages:
5
DOI:
10.1016/0168-583x(85)90476-8
File:
PDF, 524 KB
english, 1985
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