Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
1987 Vol. 21; Iss. 1-4
![](/img/cover-not-exists.png)
A novel self-aligned oxygen (SALOX) implanted SOI MOSFET device structure
J.C. Tzeng, W. Baerg, C. Ting, B. SiuVolume:
21
Year:
1987
Language:
english
Pages:
4
DOI:
10.1016/0168-583x(87)90807-x
File:
PDF, 4.26 MB
english, 1987