Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
1987 Vol. 21; Iss. 1-4
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Effects of high energy boron ions implanted in MOSFETs
E. Deng, H. Wong, N.W. CheungVolume:
21
Year:
1987
Language:
english
Pages:
8
DOI:
10.1016/0168-583x(87)90812-3
File:
PDF, 405 KB
english, 1987