The use of self-implanted amorphized silicon substrates to...

The use of self-implanted amorphized silicon substrates to eliminate channeling effects in low energy boron implants

R.B. Simonton
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Volume:
21
Year:
1987
Language:
english
Pages:
3
DOI:
10.1016/0168-583x(87)90886-x
File:
PDF, 1.26 MB
english, 1987
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