Properties of buried insulating layers in silicon formed by...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1988 Vol. 32; Iss. 1-4

Properties of buried insulating layers in silicon formed by high dose implantation at 60 keV

W. Skorupa, K. Wollschläger, R. Grötzschel, J. Schöneich, E. Hentschel, R. Kotte, F. Stary, H. Bartsch, G. Götz
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Volume:
32
Year:
1988
Language:
english
Pages:
6
DOI:
10.1016/0168-583x(88)90253-4
File:
PDF, 658 KB
english, 1988
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