Depth profiles of secondary defects of As+ and BF2+...

Depth profiles of secondary defects of As+ and BF2+ implanted silicon measured by a thermal wave technique

Katsuya Ishikawa, Masakatsu Yoshida, Mono Inoue
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Volume:
37-38
Year:
1989
Language:
english
Pages:
4
DOI:
10.1016/0168-583x(89)90194-8
File:
PDF, 317 KB
english, 1989
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