Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
1989 Vol. 37-38; Iss. none
Shallow junction formation by boron implantation with energies between 2 and 5 keV and rapid thermal annealing
R. Kakoschke, K. EhingerVolume:
37-38
Year:
1989
Language:
english
Pages:
5
DOI:
10.1016/0168-583x(89)90306-6
File:
PDF, 446 KB
english, 1989