Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
1989 Vol. 39; Iss. 1-4
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Reduction of phosphorus transient enhanced diffusion due to extended defects in ion implanted silicon
M. Servidori, F. Cembali, R. Fabbri, E. Gabilli, P. Negrini, S. Solmi, P. Zaumseil, U. Winter, M. Anderle, R. CanteriVolume:
39
Year:
1989
Language:
english
Pages:
5
DOI:
10.1016/0168-583x(89)90800-8
File:
PDF, 453 KB
english, 1989