Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
1990 Vol. 44; Iss. 3
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A study on implanted impurity activation in silicon and in situ observation of residual defects in high voltage TEM
Tonghe ZhangVolume:
44
Year:
1990
Language:
english
Pages:
6
DOI:
10.1016/0168-583x(90)90646-c
File:
PDF, 591 KB
english, 1990