Pulse height defects for 16O, 35Cl and 81Br ions in silicon...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1990 Vol. 45; Iss. 1-4

Pulse height defects for 16O, 35Cl and 81Br ions in silicon surface barrier detectors

L. Cliche, S.C. Gujrathi, L.A. Hamel
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Volume:
45
Year:
1990
Language:
english
Pages:
5
DOI:
10.1016/0168-583x(90)90833-g
File:
PDF, 520 KB
english, 1990
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