Detection of surface accumulation of dopants in...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1990 Vol. 45; Iss. 1-4

Detection of surface accumulation of dopants in rapid-thermally-annealed, shallow-implant silicon

P.J. Scanlon, M.C. Ridgway, H.H. Brongersma
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Volume:
45
Year:
1990
Language:
english
Pages:
3
DOI:
10.1016/0168-583x(90)90911-d
File:
PDF, 282 KB
english, 1990
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