Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
1991 Vol. 58; Iss. 2
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The electrical properties of planar n+−p junctions in InAs produced by S+ ion implantation
N.N. Gerasimenko, G.L. Kuryshev, A.M. Myasnikov, V.I. Obodnikov, L.N. Safronov, G.S. KhryashchevVolume:
58
Year:
1991
Language:
english
Pages:
4
DOI:
10.1016/0168-583x(91)95585-2
File:
PDF, 347 KB
english, 1991