Increased sensitivity of SIMS in indium phosphide by...

Increased sensitivity of SIMS in indium phosphide by detecting PxM− molecular ions under cesium bombardment

M. Gauneau, R. Chaplain, A. Rupert, M. Salvi, B. Descouts
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Volume:
64
Year:
1992
Language:
english
Pages:
7
DOI:
10.1016/0168-583x(92)95544-2
File:
PDF, 526 KB
english, 1992
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