Buried oxide layers formed by oxygen implantation on...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1993 Vol. 80-81; Iss. part-P2

Buried oxide layers formed by oxygen implantation on screened oxide silicon wafers: structural analysis

J. Samitier, S. Martinez, A. Pérez-Rodríguez, B. Garrido, J.R. Morante, A.M. Papon, J. Margail
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Volume:
80-81
Year:
1993
Language:
english
Pages:
4
DOI:
10.1016/0168-583x(93)90694-2
File:
PDF, 283 KB
english, 1993
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