Structural relaxation in amorphous silicon prepared by ion...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1993 Vol. 80-81; Iss. part-P2

Structural relaxation in amorphous silicon prepared by ion implantation

Yuichi Hiroyama, Teruaki Motooka, Takashi Tokuyama, Long Wei, Shoichiro Tanigawa
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Volume:
80-81
Year:
1993
Language:
english
Pages:
4
DOI:
10.1016/0168-583x(93)90720-q
File:
PDF, 263 KB
english, 1993
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