Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
1993 Vol. 80-81; Iss. part-P2
Electrical characterization of MOS structures fabricated on SF6 and SF6 + C2CIF5 reactive ion etched silicon
E. Castán, J. Vicente, J. Barbolla, E. Cabruja, E. Lora-TamayoVolume:
80-81
Year:
1993
Language:
english
Pages:
5
DOI:
10.1016/0168-583x(93)90799-c
File:
PDF, 300 KB
english, 1993