Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
1993 Vol. 80-81; Iss. part-P1
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Dose rate dependence of the ion-beam-induced epitaxial crystallization in silicon
V. Heera, R. Kögler, W. Skorupa, R. GrötzschelVolume:
80-81
Year:
1993
Language:
english
Pages:
5
DOI:
10.1016/0168-583x(93)96176-d
File:
PDF, 269 KB
english, 1993