Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
1993 Vol. 80-81; Iss. part-P1
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Dynamics of void formation during implantation of Si under self-annealing conditions and their influence on dopant distribution
G. Lullu, P.G. Merli, A. Migliori, G. Brusatin, A.V. DrigoVolume:
80-81
Year:
1993
Language:
english
Pages:
5
DOI:
10.1016/0168-583x(93)96181-b
File:
PDF, 361 KB
english, 1993