Analysis of the SiO2 defects originated by phosphorus...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1993 Vol. 80-81; Iss. part-P1

Analysis of the SiO2 defects originated by phosphorus implantation in MOS structures

S.A. Bota, J. Montserrat, A. Pérez-Rodríguez, J.R. Morante
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Volume:
80-81
Year:
1993
Language:
english
Pages:
4
DOI:
10.1016/0168-583x(93)96192-f
File:
PDF, 321 KB
english, 1993
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