Characterization of GeSi layers formed by high dose Ge...

Characterization of GeSi layers formed by high dose Ge implantation into Si

W.Y. Cheung, S.P. Wong, I.H. Wilson, T.H. Zhang
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Volume:
101
Year:
1995
Language:
english
Pages:
4
DOI:
10.1016/0168-583x(95)00379-7
File:
PDF, 283 KB
english, 1995
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