Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
1995 Vol. 101; Iss. 3
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Characterization of GeSi layers formed by high dose Ge implantation into Si
W.Y. Cheung, S.P. Wong, I.H. Wilson, T.H. ZhangVolume:
101
Year:
1995
Language:
english
Pages:
4
DOI:
10.1016/0168-583x(95)00379-7
File:
PDF, 283 KB
english, 1995