Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
1996 Vol. 112; Iss. 1-4
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Influence of sample thickness on carrier lifetime modification induced by 4 MeV proton implantation in silicon
L.P. Biró, J. Gyulai, N.Q. Khanh, P. TüttőVolume:
112
Year:
1996
Language:
english
Pages:
4
DOI:
10.1016/0168-583x(95)01228-1
File:
PDF, 332 KB
english, 1996