Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
1996 Vol. 112; Iss. 1-4
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The chemical factor and its influence on the formation of defect structures and their gettering properties in layers of silicon implanted with chemical-active ions
A.N. Aleshin, K.L. Enisherlova, A.A. Kalinin, V.N. MordkovichVolume:
112
Year:
1996
Language:
english
Pages:
4
DOI:
10.1016/0168-583x(95)01247-8
File:
PDF, 424 KB
english, 1996