Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
1996 Vol. 112; Iss. 1-4
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The effect of dose rate on ion implanted impurity profiles in silicon
S. Tian, S.-H. Yang, S. Morris, K. Parab, A.F. Tasch, D. Kamenitsa, R. Reece, B. Freer, R.B. Simonton, C. MageeVolume:
112
Year:
1996
Language:
english
Pages:
4
DOI:
10.1016/0168-583x(95)01280-x
File:
PDF, 444 KB
english, 1996