The effect of dose rate on ion implanted impurity profiles...

The effect of dose rate on ion implanted impurity profiles in silicon

S. Tian, S.-H. Yang, S. Morris, K. Parab, A.F. Tasch, D. Kamenitsa, R. Reece, B. Freer, R.B. Simonton, C. Magee
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Volume:
112
Year:
1996
Language:
english
Pages:
4
DOI:
10.1016/0168-583x(95)01280-x
File:
PDF, 444 KB
english, 1996
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