Defect development and dopant location due to elevated...

Defect development and dopant location due to elevated temperature implantation of InP with MeV zinc ions

H. Krause, R.-H. Flagmeyer, J. Vogt, A. Kling, T. Butz
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Volume:
113
Year:
1996
Language:
english
Pages:
5
DOI:
10.1016/0168-583x(95)01330-x
File:
PDF, 480 KB
english, 1996
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