Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
1996 Vol. 113; Iss. 1-4
Defect development and dopant location due to elevated temperature implantation of InP with MeV zinc ions
H. Krause, R.-H. Flagmeyer, J. Vogt, A. Kling, T. ButzVolume:
113
Year:
1996
Language:
english
Pages:
5
DOI:
10.1016/0168-583x(95)01330-x
File:
PDF, 480 KB
english, 1996