Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
1996 Vol. 117; Iss. 3
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Electrical characteristics of 100 MeV 28Si implanted LEC grown GaAs〈100〉
S. Arulkumaran, J. Arokiaraj, M. Udhayasankar, J. Kumar, D. KanjilalVolume:
117
Year:
1996
Language:
english
Pages:
6
DOI:
10.1016/0168-583x(96)00309-6
File:
PDF, 529 KB
english, 1996