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Effect of the active layer thickness on the leakage current in p+p p+ accumulation polycrystalline silicon TFTs
H. Sehil, F. Raoult, Y. Colin, O. BonnaudVolume:
34
Year:
1993
Language:
english
Pages:
6
DOI:
10.1016/0254-0584(93)90121-2
File:
PDF, 609 KB
english, 1993