Improvements in the device characteristics of IZO-based transparent thin-film transistors with co-sputtered HfO2–Al2O3 gate dielectrics
Heegeun Son, Jeongsoo Kim, Jungil Yang, Dongkyu Cho, Moonsuk YiVolume:
11
Year:
2011
Language:
english
Pages:
1
DOI:
10.1016/j.cap.2011.03.080
File:
PDF, 464 KB
english, 2011