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New trench gate power MOSFET with high breakdown voltage and reduced on-resistance using a SiGe zone in drift region
Mahsa Mehrad, Ali A. OroujiVolume:
12
Year:
2012
Language:
english
Pages:
1
DOI:
10.1016/j.cap.2012.03.023
File:
PDF, 611 KB
english, 2012