‘Pop-in’ phenomenon during nanoindentation in epitaxial GaN...

Materials Chemistry and Physics 2006 Vol. 99; Iss. 2-3

‘Pop-in’ phenomenon during nanoindentation in epitaxial GaN thin films on c-plane sapphire substrates

R. Navamathavan, Yong-Tae Moon, Gwang-Seok Kim, Tae Geol Lee, Jun-Hee Hahn, Seong-Ju Park
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Volume:
99
Year:
2006
Language:
english
Pages:
4
DOI:
10.1016/j.matchemphys.2005.11.021
File:
PDF, 265 KB
english, 2006
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