Effectiveness of Si thin buffer layer for selective SiGe...

Materials Chemistry and Physics 2008 Vol. 107; Iss. 2-3

Effectiveness of Si thin buffer layer for selective SiGe epitaxial growth in recessed source and drain for pMOS

P.L. Cheng, C.I. Liao, C.C. Chien, C.L. Yang, S.F. Ting, L.S. Jeng, C.T. Huang, Osbert Cheng, S.F. Tzou, W.S. Hsu
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Volume:
107
Year:
2008
Language:
english
Pages:
5
DOI:
10.1016/j.matchemphys.2007.08.020
File:
PDF, 763 KB
english, 2008
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