Role of Ga2O3–In2O3–ZnO channel composition on the electrical performance of thin-film transistors
A. Olziersky, P. Barquinha, A. Vilà, C. Magaña, E. Fortunato, J.R. Morante, R. MartinsVolume:
131
Year:
2011
Language:
english
Pages:
7
DOI:
10.1016/j.matchemphys.2011.10.013
File:
PDF, 433 KB
english, 2011