Carrier concentration dependence of donor activation energy...

Materials Research Bulletin 2012 Vol. 47; Iss. 6

Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE

Mahesh Kumar, Thirumaleshwara N. Bhat, Basanta Roul, Mohana K. Rajpalke, A.T. Kalghatgi, S.B. Krupanidhi
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Volume:
47
Year:
2012
Language:
english
Pages:
4
DOI:
10.1016/j.materresbull.2012.03.016
File:
PDF, 519 KB
english, 2012
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