A novel mechanism to explain wafer bending during the...

Materials Letters 2008 Vol. 62; Iss. 14

A novel mechanism to explain wafer bending during the growth of SiC films on Si

Bernard E. Watts, Giovanni Attolini, Matteo Bosi, Cesare Frigeri
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Volume:
62
Year:
2008
Language:
english
Pages:
3
DOI:
10.1016/j.matlet.2007.11.066
File:
PDF, 358 KB
english, 2008
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