Formation speed of atomically flat surface on Si...

Microelectronic Engineering 2011 Vol. 88; Iss. 10

Formation speed of atomically flat surface on Si (1 0 0) in ultra-pure argon

Xiang Li, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
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Volume:
88
Year:
2011
Language:
english
Pages:
7
DOI:
10.1016/j.mee.2011.06.014
File:
PDF, 1.26 MB
english, 2011
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