Minimizing variation in the electrical characteristics of gate-all-around thin film transistors through the use of multiple-channel nanowire and NH3 plasma treatment
Po-Chun Huang, Lu-An Chen, Chen-Chia Chen, Jeng-Tzong SheuVolume:
91
Year:
2012
Language:
english
Pages:
5
DOI:
10.1016/j.mee.2011.10.009
File:
PDF, 645 KB
english, 2012