Erratum to “Atomic-scale theory on degradation of HfSiON...

Microelectronic Engineering 2011 Vol. 88; Iss. 11

Erratum to “Atomic-scale theory on degradation of HfSiON gate stacks by atomic hydrogen accompanied by its interaction with oxygen vacancy and substitutional nitrogen” [Microelectron. Eng. 88 (7) (2011) 1457–1460]

Yasushi Nakasaki, Izumi Hirano, Koichi Kato, Yuuichiro Mitani
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Volume:
88
Year:
2011
Language:
english
DOI:
10.1016/j.mee.2011.11.002
File:
PDF, 111 KB
english, 2011
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