Total ionising dose effects on punch-through insulated gate...

Microelectronics Reliability 2011 Vol. 51; Iss. 9-11

Total ionising dose effects on punch-through insulated gate bipolar transistors turn-on switching behaviour

B. Tala-Ighil, A. Oukaour, H. Gualous, B. Boudart, B. Pouderoux, J-L. Trolet, M. Piccione
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Volume:
51
Year:
2011
Language:
english
Pages:
5
DOI:
10.1016/j.microrel.2011.06.049
File:
PDF, 516 KB
english, 2011
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