Impact of gate placement on RF power degradation in GaN...

Microelectronics Reliability 2012 Vol. 52; Iss. 1

Impact of gate placement on RF power degradation in GaN high electron mobility transistors

Jungwoo Joh, Jesús A. del Alamo
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Volume:
52
Year:
2012
Language:
english
Pages:
6
DOI:
10.1016/j.microrel.2011.09.008
File:
PDF, 1.71 MB
english, 2012
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