Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors
E.A. Douglas, C.Y. Chang, B.P. Gila, M.R. Holzworth, K.S. Jones, L. Liu, Jinhyung Kim, Soohwan Jang, G.D. Via, F. Ren, S.J. PeartonVolume:
52
Year:
2012
Language:
english
Pages:
6
DOI:
10.1016/j.microrel.2011.09.018
File:
PDF, 931 KB
english, 2012