Study of mechanical stress impact on the I–V...

Microelectronics Reliability 2012 Vol. 52; Iss. 3

Study of mechanical stress impact on the I–V characteristics of a power VDMOS device using 2D FEM simulations

E. Marcault, M. Breil, A. Bourennane, P. Tounsi, J.-M. Dorkel
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Volume:
52
Year:
2012
Language:
english
Pages:
8
DOI:
10.1016/j.microrel.2011.12.028
File:
PDF, 1.56 MB
english, 2012
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