TCAD modeling of NPN-SI-BJT electrical performance...

Materials Science in Semiconductor Processing 2010 Vol. 13; Iss. 5-6

TCAD modeling of NPN-SI-BJT electrical performance improvement through SiGe extrinsic stress layer

Mahmoud Al-Sa'di, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
13
Year:
2010
Language:
english
Pages:
5
DOI:
10.1016/j.mssp.2011.03.002
File:
PDF, 516 KB
english, 2010
Conversion to is in progress
Conversion to is failed